APTM10DUM02G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Factory Lead Time :

36 Weeks

JESD-30 Code :

R-XUFM-X7

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Continuous Drain Current (ID) :

495A

Packaging :

Bulk

Number of Terminations :

7

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 200A, 10V

Transistor Application :

SWITCHING

Max Power Dissipation :

1.25kW

Terminal Position :

UPPER

Fall Time (Typ) :

160 ns

Number of Pins :

6

Operating Temperature :

-40°C~150°C TJ

Power - Max :

1250W

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

3000 mJ

Rise Time :

240ns

Published :

2012

Mount :

Chassis Mount, Screw

Gate Charge (Qg) (Max) @ Vgs :

1360nC @ 10V

Turn-Off Delay Time :

500 ns

DS Breakdown Voltage-Min :

100V

Pin Count :

7

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

1.25kW

Transistor Element Material :

SILICON

Case Connection :

Isolated

Turn On Delay Time :

160 ns

Vgs(th) (Max) @ Id :

4V @ 10mA

RoHS Status :

RoHS Compliant

Package / Case :

SP6

Number of Elements :

2

ECCN Code :

EAR99

Terminal Finish :

TIN SILVER COPPER

Mounting Type :

Chassis Mount

FET Feature :

Standard

JESD-609 Code :

e1

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

1900A