APTM10DHM09TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

3000 mJ

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

14

Qualification Status :

Not Qualified

Terminal Position :

UPPER

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Mounting Type :

Chassis Mount

Package / Case :

SP4

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

RoHS Compliant

Number of Terminations :

14

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.01Ohm

Reach Compliance Code :

Unknown

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

Max Power Dissipation :

390W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

390W

Continuous Drain Current (ID) :

139A

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

FET Feature :

Standard

Terminal Form :

UNSPECIFIED

Number of Pins :

4

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

FET Type :

2 N-Channel (Dual) Asymmetrical