APTM100DA33T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

23A

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

396m Ω @ 18A, 10V

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7868pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

12

Power Dissipation :

390W

Factory Lead Time :

36 Weeks

Power Dissipation-Max :

390W Tc

Pbfree Code :

yes

JESD-609 Code :

e1

Terminal Position :

UPPER

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SP1

Turn On Delay Time :

44 ns

Transistor Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Fall Time (Typ) :

38 ns

Drain-source On Resistance-Max :

0.39Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Number of Terminations :

12

FET Type :

N-Channel

Rise Time :

40ns

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

150 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain to Source Voltage (Vdss) :

1000V

Case Connection :

Isolated

Packaging :

Bulk

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

1

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V