APTC60SKM35T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

416W Tc

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

600V

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.035Ohm

Number of Terminations :

12

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Packaging :

Bulk

Number of Pins :

1

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Continuous Drain Current (ID) :

72A

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

35m Ω @ 72A, 10V

Published :

2007

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

416W

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

200A

Mount :

Chassis Mount, Screw

Vgs (Max) :

±20V

Pin Count :

12

Package / Case :

SP1

Mounting Type :

Chassis Mount

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.9V @ 5.4mA

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified