APT80M60J
- Mfr.Part #
- APT80M60J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 84A ISOTOP
- Stock
- 27,805
- In Stock :
- 27,805
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 125 ns
- Series :
- POWER MOS 8™
- Continuous Drain Current (ID) :
- 84A
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Mounting Type :
- Chassis Mount
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 60A, 10V
- Packaging :
- Tube
- Published :
- 1997
- Power Dissipation-Max :
- 960W Tc
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Factory Lead Time :
- 19 Weeks
- Voltage - Rated DC :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- SOT-227-4, miniBLOC
- Drain-source On Resistance-Max :
- 0.06Ohm
- Vgs (Max) :
- ±30V
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 84A Tc
- Pin Count :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 600nC @ 10V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 135 ns
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED
- Input Capacitance (Ciss) (Max) @ Vds :
- 24000pF @ 25V
- Mount :
- Chassis Mount, Screw
- Avalanche Energy Rating (Eas) :
- 3350 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Current Rating :
- 80A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 960W
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 155ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Turn-Off Delay Time :
- 410 ns
- ECCN Code :
- EAR99
- Datasheets
- APT80M60J

N-Channel Tube 55m Ω @ 60A, 10V ±30V 24000pF @ 25V 600nC @ 10V SOT-227-4, miniBLOC
APT80M60J Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3350 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 24000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 84A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 410 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 135 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT80M60J Features
the avalanche energy rating (Eas) is 3350 mJ
a continuous drain current (ID) of 84A
the turn-off delay time is 410 ns
APT80M60J Applications
There are a lot of Microsemi Corporation
APT80M60J applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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