APT50M75JLLU3
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- Mfr.Part #
- APT50M75JLLU3
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 51A SOT227
- Stock
- 30,839
- In Stock ：
- 30,839
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 290W
- Mount :
- Chassis Mount, Screw
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 500V
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.075Ohm
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- UNSPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- ECCN Code :
- EAR99
- Published :
- 2006
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5590pF @ 25V
- Mounting Type :
- Chassis Mount
- Radiation Hardening :
- No
- Turn On Delay Time :
- 10 ns
- Terminal Position :
- UPPER
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Turn-Off Delay Time :
- 21 ns
- Factory Lead Time :
- 36 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Pin Count :
- 4
- Power Dissipation-Max :
- 290W Tc
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 25.5A, 10V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 5 ns
- Number of Terminations :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 51A
- Rise Time :
- 20ns
- Datasheets
- APT50M75JLLU3
N-Channel Bulk 75m Ω @ 25.5A, 10V ±30V 5590pF @ 25V 123nC @ 10V 500V SOT-227-4, miniBLOC
APT50M75JLLU3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5590pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APT50M75JLLU3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 51A
the turn-off delay time is 21 ns
a 500V drain to source voltage (Vdss)
APT50M75JLLU3 Applications
There are a lot of Microsemi Corporation
APT50M75JLLU3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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