APT20M22B2VFRG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

75A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

5 ns

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

10200pF @ 25V

Turn-Off Delay Time :

48 ns

Avalanche Energy Rating (Eas) :

2500 mJ

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Rise Time :

25ns

Power Dissipation-Max :

520W Tc

Turn On Delay Time :

16 ns

Package / Case :

TO-247-3 Variant

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Mount :

Through Hole

Reach Compliance Code :

Unknown

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pin Count :

3

Series :

POWER MOS V®

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

3

Voltage - Rated DC :

200V

Drain-source On Resistance-Max :

0.022Ohm

Power Dissipation :

520W

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Gate Charge (Qg) (Max) @ Vgs :

435nC @ 10V

Vgs (Max) :

±30V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Mounting Type :

Through Hole