APT150GN60B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Pin Count :

3

Transistor Element Material :

SILICON

Switching Energy :

8.81mJ (on), 4.295mJ (off)

Power - Max :

536W

Test Condition :

400V, 150A, 1 Ω, 15V

Turn On Time :

154 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Max Collector Current :

220A

Terminal Finish :

TIN SILVER COPPER

Pbfree Code :

yes

Td (on/off) @ 25°C :

44ns/430ns

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Voltage (VCEO) :

600V

Number of Terminations :

3

Factory Lead Time :

24 Weeks

Current - Collector Pulsed (Icm) :

450A

JEDEC-95 Code :

TO-247AD

Additional Feature :

LOW CONDUCTION LOSS, HIGH RELIABILITY

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 150A

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6.5V

Transistor Application :

POWER CONTROL

Input Type :

Standard

Gate-Emitter Voltage-Max :

30V

Gate Charge :

970nC

Package / Case :

TO-247-3 Variant

IGBT Type :

Trench Field Stop

Packaging :

Tube

Turn Off Time-Nom (toff) :

575 ns

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e1

Max Power Dissipation :

536W

Element Configuration :

Single

Mount :

Through Hole

Published :

1999