APT10035B2LLG
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- Mfr.Part #
- APT10035B2LLG
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 28A T-MAX
- Stock
- 35,687
- In Stock ：
- 35,687
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-247-3 Variant
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Rise Time :
- 10ns
- Series :
- POWER MOS 7®
- Current Rating :
- 28A
- Fall Time (Typ) :
- 9 ns
- Case Connection :
- DRAIN
- Published :
- 1997
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 1kV
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn-Off Delay Time :
- 36 ns
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 14A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 186nC @ 10V
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 28A
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 5185pF @ 25V
- Turn On Delay Time :
- 12 ns
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 690W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 690W
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Transistor Element Material :
- SILICON
- Datasheets
- APT10035B2LLG
N-Channel Tube 350m Ω @ 14A, 10V ±30V 5185pF @ 25V 186nC @ 10V 1000V TO-247-3 Variant
APT10035B2LLG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5185pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 36 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT10035B2LLG Features
a continuous drain current (ID) of 28A
the turn-off delay time is 36 ns
a 1000V drain to source voltage (Vdss)
APT10035B2LLG Applications
There are a lot of Microsemi Corporation
APT10035B2LLG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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