ALD1107PBL

Manufacturer :

Advanced Linear Devices, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

500mW

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 5V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Pins :

14

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Pbfree Code :

yes

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

1800 Ω @ 5V

Drain to Source Voltage (Vdss) :

10.6V

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 1μA

Drain to Source Breakdown Voltage :

-12V

RoHS Status :

ROHS3 Compliant

Configuration :

COMMON SUBSTRATE, 4 ELEMENTS

Operating Temperature :

0°C~70°C TJ

Max Power Dissipation :

500mW

Continuous Drain Current (ID) :

2mA

Package / Case :

14-DIP (0.300, 7.62mm)

Number of Elements :

4

Number of Terminations :

14

FET Type :

4 P-Channel, Matched Pair

Gate to Source Voltage (Vgs) :

-13.2V

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR