2SK3447TZ-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Supplier Device Package :

TO-92MOD

Reach Compliance Code :

Compliant

Package :

Bulk

JESD-30 Code :

O-PBCY-T3

Pin Count :

3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

2.5 Ω

Input Capacitance (Ciss) (Max) @ Vds :

85 pF @ 10 V

Terminal Position :

BOTTOM

Drain Current-Max (Abs) (ID) :

1 A

Manufacturer :

Renesas Electronics Corporation

Drain to Source Voltage (Vdss) :

150 V

Product Status :

Obsolete

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Operating Temperature :

150°C

Subcategory :

FET General Purpose Power

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

4.5 nC @ 10 V

DS Breakdown Voltage-Min :

150 V

Terminal Finish :

Tin/Copper (Sn/Cu)

FET Feature :

-

HTS Code :

8541.21.00.95

Number of Terminals :

3

Rds On (Max) @ Id, Vgs :

1.95Ohm @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation (Max) :

900mW (Ta)

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Package Shape :

Round

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

Package / Case :

TO-226-3, TO-92-3 Long Body

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JEDEC-95 Code :

TO-92

Power Dissipation-Max (Abs) :

0.9 W

Mounting Type :

Through Hole

Pbfree Code :

yes

Series :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Brand Name :

Renesas

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99