2SK2729-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

FET General Purpose Power

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

20A (Ta)

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

22 mJ

Reach Compliance Code :

Compliant

Pin Count :

3

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

80 A

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Operating Temperature :

150°C

Manufacturer :

Renesas Electronics Corporation

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

150 W

Series :

-

Rds On (Max) @ Id, Vgs :

290mOhm @ 10A, 10V

Mounting Type :

Through Hole

Case Connection :

DRAIN

Package :

Bulk

Factory Lead Time :

1 Week

Vgs (Max) :

±30V

Terminal Position :

Single

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.29 Ω

Power Dissipation (Max) :

150W (Ta)

FET Feature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

20 A

Drain to Source Voltage (Vdss) :

500 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500 V

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Number of Terminals :

3

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

3300 pF @ 10 V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

FET Type :

N-Channel

Supplier Device Package :

TO-3P

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

55 nC @ 10 V