2SD2702TL
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- Mfr.Part #
- 2SD2702TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A TUMT3
- Stock
- 10,175
- In Stock ：
- 10,175
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 12V
- Max Collector Current :
- 1.5A
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 85mV
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 800mW
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Package / Case :
- 3-SMD, Flat Lead
- JESD-609 Code :
- e2
- Power - Max :
- 800mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Copper, Tin
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 400MHz
- Factory Lead Time :
- 13 Weeks
- hFE Min :
- 270
- Base Part Number :
- 2SD2702
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 12V
- Transition Frequency :
- 400MHz
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 15V
- Published :
- 2007
- Datasheets
- 2SD2702TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SD2702TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 85mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SD2702TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SD2702TL Applications
There are a lot of ROHM Semiconductor
2SD2702TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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