2SD2675TL
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- Mfr.Part #
- 2SD2675TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TSMT3
- Stock
- 8,845
- In Stock ：
- 8,845
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.8mm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 20 Weeks
- Gain Bandwidth Product :
- 320MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 30V
- Current Rating :
- 1A
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Length :
- 3mm
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Package / Case :
- SC-96
- Number of Pins :
- 3
- Pin Count :
- 3
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Copper, Silver, Tin
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Transition Frequency :
- 320MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Continuous Collector Current :
- 1A
- Max Power Dissipation :
- 500mW
- HTS Code :
- 8541.21.00.75
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2003
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Transistor Type :
- NPN
- Max Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Terminal Form :
- Gull wing
- Base Part Number :
- 2SD2675
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Collector Emitter Breakdown Voltage :
- 30V
- hFE Min :
- 270
- Collector Emitter Saturation Voltage :
- 120mV
- Height :
- 950μm
- Datasheets
- 2SD2675TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SD2675TL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 320MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD2675TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 320MHz
2SD2675TL Applications
There are a lot of ROHM Semiconductor
2SD2675TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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