2SD2673TL
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- Mfr.Part #
- 2SD2673TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TSMT3
- Stock
- 2,965
- In Stock ：
- 2,965
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 3A
- JESD-609 Code :
- e1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Transition Frequency :
- 200MHz
- Frequency :
- 200MHz
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Package / Case :
- SC-96
- Voltage - Rated DC :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Base Part Number :
- 2SD2673
- Power Dissipation :
- 1W
- hFE Min :
- 270
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 30V
- Contact Plating :
- Copper, Silver, Tin
- Max Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Current Rating :
- 3A
- Factory Lead Time :
- 20 Weeks
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 120mV
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SD2673TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SD2673TL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.The collector emitter saturation voltage is 120mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
2SD2673TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz
2SD2673TL Applications
There are a lot of ROHM Semiconductor
2SD2673TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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