2SD2656T106
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- Mfr.Part #
- 2SD2656T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A UMT3
- Stock
- 2,500
- In Stock ：
- 2,500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-70, SOT-323
- Length :
- 2.1mm
- HTS Code :
- 8541.21.00.75
- hFE Min :
- 270
- Max Collector Current :
- 1A
- Base Part Number :
- 2SD2656
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 400MHz
- Contact Plating :
- Copper, Silver, Tin
- Pbfree Code :
- yes
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 30V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 400MHz
- Max Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Collector Emitter Saturation Voltage :
- 140mV
- Terminal Form :
- Gull wing
- Terminal Finish :
- TIN SILVER COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 100MHz
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 1A
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Height :
- 900μm
- JESD-609 Code :
- e1
- Width :
- 1.35mm
- Transistor Type :
- NPN
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- 2SD2656T106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2656T106 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD2656T106 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 400MHz
2SD2656T106 Applications
There are a lot of ROHM Semiconductor
2SD2656T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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