2SD2653KT146
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- Mfr.Part #
- 2SD2653KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A SMT3
- Stock
- 78,137
- In Stock ：
- 78,137
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Height :
- 1mm
- Voltage - Rated DC :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Copper, Silver, Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 2A
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Breakdown Voltage :
- 12V
- Base Part Number :
- 2SD2653
- Width :
- 1.6mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Frequency :
- 100MHz
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 360MHz
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 12V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 15V
- hFE Min :
- 270
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 90mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 12V
- Number of Elements :
- 1
- Published :
- 1998
- Transition Frequency :
- 360MHz
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 2A
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- 2SD2653KT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2653KT146 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 90mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SD2653KT146 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz
2SD2653KT146 Applications
There are a lot of ROHM Semiconductor
2SD2653KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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