2SD2537T100V
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- Mfr.Part #
- 2SD2537T100V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.2A MPT3
- Stock
- 3,210
- In Stock ：
- 3,210
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2SD2537
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e2
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Terminal Finish :
- TIN COPPER
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 500mA
- Transition Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- 30V
- Height :
- 1.4mm
- JESD-30 Code :
- R-PSSO-F3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 500mA 5V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 25V
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- 12V
- hFE Min :
- 820
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 200MHz
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 1.2A
- Case Connection :
- COLLECTOR
- Voltage - Rated DC :
- 25V
- Current Rating :
- 1.2A
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Contact Plating :
- Copper, Tin
- Length :
- 4.7mm
- Width :
- 2.7mm
- Number of Pins :
- 4
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- 1.2A
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 2011
- Datasheets
- 2SD2537T100V
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2537T100V Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 500mA 5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.2A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.2A volts at its maximum.
2SD2537T100V Features
the DC current gain for this device is 820 @ 500mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 200MHz
2SD2537T100V Applications
There are a lot of ROHM Semiconductor
2SD2537T100V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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