2SD2226KT146V
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- Mfr.Part #
- 2SD2226KT146V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 3,815
- In Stock ：
- 3,815
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e1
- Max Collector Current :
- 150mA
- Radiation Hardening :
- No
- Current Rating :
- 150mA
- Base Part Number :
- 2SD2226
- Factory Lead Time :
- 13 Weeks
- Contact Plating :
- Copper, Silver, Tin
- Pin Count :
- 3
- Gain Bandwidth Product :
- 250MHz
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Continuous Collector Current :
- 150mA
- Mounting Type :
- Surface Mount
- Published :
- 2004
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 300mV
- hFE Min :
- 820
- Max Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 50V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transition Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Frequency :
- 250MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SD2226KT146V
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2226KT146V Overview
In this device, the DC current gain is 820 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).250MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SD2226KT146V Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2226KT146V Applications
There are a lot of ROHM Semiconductor
2SD2226KT146V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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