2SD2170T100
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- Mfr.Part #
- 2SD2170T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 90V 2A MPT3
- Stock
- 1,537
- In Stock ：
- 1,537
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Tin
- Max Breakdown Voltage :
- 90V
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 80MHz
- Transistor Type :
- NPN - Darlington
- Continuous Collector Current :
- 2A
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Published :
- 2001
- Collector Emitter Voltage (VCEO) :
- 110V
- JESD-609 Code :
- e2
- Max Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 80MHz
- Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- TIN COPPER
- Current Rating :
- 2A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SD2170
- Voltage - Rated DC :
- 90V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 90V
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- JESD-30 Code :
- R-PSSO-F3
- hFE Min :
- 1000
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Collector Base Voltage (VCBO) :
- 110V
- Datasheets
- 2SD2170T100
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SD2170T100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 90V volts.When collector current reaches its maximum, it can reach 2A volts.
2SD2170T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2170T100 Applications
There are a lot of ROHM Semiconductor
2SD2170T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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