2SD1918TLQ
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- Mfr.Part #
- 2SD1918TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A CPT3
- Stock
- 16,247
- In Stock ：
- 16,247
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2SD1918
- Collector Emitter Breakdown Voltage :
- 160V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Current Rating :
- 1.5A
- Continuous Collector Current :
- 1.5A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 20 Weeks
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Published :
- 1999
- Voltage - Rated DC :
- 160V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 2
- hFE Min :
- 120
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power Dissipation :
- 1W
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 2V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Power - Max :
- 10W
- HTS Code :
- 8541.29.00.75
- JESD-609 Code :
- e2
- Max Breakdown Voltage :
- 160V
- Termination :
- SMD/SMT
- JESD-30 Code :
- R-PSSO-G2
- Contact Plating :
- Copper, Tin
- Gain Bandwidth Product :
- 80MHz
- Radiation Hardening :
- No
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transition Frequency :
- 80MHz
- Datasheets
- 2SD1918TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1918TLQ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 5V.When VCE saturation is 2V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 80MHz.This device can take an input voltage of 160V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2SD1918TLQ Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1918TLQ Applications
There are a lot of ROHM Semiconductor
2SD1918TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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