2SD1834T100
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- Mfr.Part #
- 2SD1834T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 1A MPT3
- Stock
- 14,623
- In Stock ：
- 14,623
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Height :
- 1.5mm
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 3V
- Pbfree Code :
- yes
- Width :
- 2.5mm
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SD1834
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- hFE Min :
- 2000
- Current Rating :
- -1A
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Continuous Collector Current :
- 1A
- Transition Frequency :
- 150MHz
- Polarity :
- NPN
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.75
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 13 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Case Connection :
- COLLECTOR
- Voltage - Rated DC :
- -60V
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Contact Plating :
- Copper, Tin
- Length :
- 4.5mm
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Termination :
- SMD/SMT
- JESD-609 Code :
- e2
- Datasheets
- 2SD1834T100
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SD1834T100 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD1834T100 Features
the DC current gain for this device is 2000 @ 500mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 150MHz
2SD1834T100 Applications
There are a lot of ROHM Semiconductor
2SD1834T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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