2SD1685G
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- Mfr.Part #
- 2SD1685G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A TO126ML
- Stock
- 7,634
- In Stock ：
- 7,634
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2013
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 500mA 2V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Surface Mount :
- No
- hFE Min :
- 280
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Max Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 120MHz
- Current - Collector (Ic) (Max) :
- 5A
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 60mA, 3A
- Packaging :
- Bulk
- Element Configuration :
- Single
- Transition Frequency :
- 120MHz
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Datasheets
- 2SD1685G
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1685G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 280 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 60mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.A maximum collector current of 5A volts can be achieved.
2SD1685G Features
the DC current gain for this device is 280 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SD1685G Applications
There are a lot of ON Semiconductor
2SD1685G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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