2SC4883A

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Published :

2001

Series :

--

Transistor Type :

NPN

Power - Max :

20W

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 700mA 10V

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

180V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Pbfree Code :

yes

Packaging :

Bulk

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

10μA ICBO

Frequency - Transition :

120MHz

ECCN Code :

EAR99

Package :

Bulk

Transition Frequency :

120MHz

Case Connection :

Isolated

Reach Compliance Code :

Unknown

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

1V @ 70mA, 700mA

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Through Hole

Product Status :

Obsolete

Terminal Position :

Single

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

20W

Package / Case :

TO-220-3 Full Pack

Supplier Device Package :

TO-220F

Current - Collector (Ic) (Max) :

2A

Surface Mount :

No