2SC4617EBTLR
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- Mfr.Part #
- 2SC4617EBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3F
- Stock
- 9,387
- In Stock ：
- 9,387
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 150mA
- Max Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Max Frequency :
- 100MHz
- Transition Frequency :
- 180MHz
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2009
- Factory Lead Time :
- 9 Weeks
- Base Part Number :
- 2SC4617
- Mounting Type :
- Surface Mount
- Width :
- 860μm
- Height :
- 700μm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 180MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 400mV
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 150mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 120
- Element Configuration :
- Single
- Package / Case :
- SC-89, SOT-490
- Max Breakdown Voltage :
- 50V
- Length :
- 1.6mm
- Terminal Form :
- Flat
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Datasheets
- 2SC4617EBTLR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SC4617EBTLR Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SC4617EBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLR Applications
There are a lot of ROHM Semiconductor
2SC4617EBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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