2N6796U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

800mW Ta 25W Tc

Drain Current-Max (Abs) (ID) :

8A

Number of Elements :

1

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

15

Continuous Drain Current (ID) :

8A

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Mount :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Package / Case :

18-CLCC

Gate Charge (Qg) (Max) @ Vgs :

6.34nC @ 10V

JESD-30 Code :

R-CQCC-N15

Pin Count :

16

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Terminal Position :

QUAD

Vgs(th) (Max) @ Id :

4V @ 250mA

Drain-source On Resistance-Max :

0.195Ohm

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V