2N6045G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

100V

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

3

Height :

15.748mm

Pin Count :

3

Lead Free :

Lead Free

Max Collector Current :

8A

JESD-609 Code :

e3

Factory Lead Time :

2 Weeks

Transistor Type :

NPN - Darlington

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Polarity :

NPN

Base Part Number :

2N6045

Length :

10.2616mm

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Package / Case :

TO-220-3

Element Configuration :

Single

Current - Collector Cutoff (Max) :

20μA

Continuous Collector Current :

8A

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Voltage - Rated DC :

-100V

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2V

hFE Min :

1000

Max Power Dissipation :

75W

Weight :

4.535924g

Peak Reflow Temperature (Cel) :

260

Current Rating :

8A

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Power Dissipation :

75W

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Collector Emitter Breakdown Voltage :

100V

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4.826mm

Published :

2006