2N6039G
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- Mfr.Part #
- 2N6039G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126
- Stock
- 2,967
- In Stock ：
- 2,967
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 2V
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Continuous Collector Current :
- 4A
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Width :
- 7.74mm
- Max Power Dissipation :
- 40W
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- 2N6039
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 2.66mm
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Power Dissipation :
- 40W
- Transition Frequency :
- 25MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 11.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Published :
- 2000
- Packaging :
- Bulk
- Max Collector Current :
- 4A
- Transistor Application :
- AMPLIFIER
- Datasheets
- 2N6039G
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NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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