2N6039
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- Mfr.Part #
- 2N6039
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS DARL NPN 4A 80V TO225AA
- Stock
- 30,131
- In Stock ：
- 30,131
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 4.535924g
- Package / Case :
- TO-225AA, TO-126-3
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Length :
- 11.04mm
- Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100μA
- Continuous Collector Current :
- 4A
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity :
- NPN
- Height :
- 2.66mm
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Width :
- 7.74mm
- Transition Frequency :
- 25MHz
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- Published :
- 2000
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 4A
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Base Part Number :
- 2N6039
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Datasheets
- 2N6039
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NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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