2N6038G

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Mfr.Part #
2N6038G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 60V 4A TO126
Stock
29
In Stock :
29

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
60V
Length :
7.74mm
Width :
2.66mm
Pin Count :
3
Max Power Dissipation :
40W
Weight :
4.535924g
Collector Emitter Saturation Voltage :
2V
Published :
2008
Max Collector Current :
4A
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Voltage - Rated DC :
60V
Current - Collector Cutoff (Max) :
100μA
ECCN Code :
EAR99
Halogen Free :
Halogen Free
Base Part Number :
2N6038
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
60V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Bulk
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
60V
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
40W
Surface Mount :
No
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-65°C~150°C TJ
Transistor Type :
NPN - Darlington
RoHS Status :
ROHS3 Compliant
Height :
11.04mm
Current Rating :
4A
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Transistor Application :
AMPLIFIER
REACH SVHC :
No SVHC
Continuous Collector Current :
4A
Polarity :
NPN
Contact Plating :
Tin
Mounting Type :
Through Hole
Number of Pins :
3
Number of Terminations :
3
Transition Frequency :
25MHz
Package / Case :
TO-225AA, TO-126-3
Datasheets
2N6038G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6038G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N6038, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, 2N6038G pinout, 2N6038G datasheet PDF, 2N6038G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6038G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6038G


NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

2N6038G Overview


DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 4A volts.

2N6038G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz


2N6038G Applications


There are a lot of ON Semiconductor
2N6038G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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