2N6035G

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Mfr.Part #
2N6035G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 60V 4A TO126
Stock
5,520
In Stock :
5,520

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
60V
Weight :
4.535924g
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Surface Mount :
No
Width :
6.35mm
Transistor Type :
PNP - Darlington
JESD-609 Code :
e3
Number of Pins :
3
Base Part Number :
2N6035
Height :
6.35mm
Radiation Hardening :
No
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
60V
Current - Collector Cutoff (Max) :
100μA
hFE Min :
100
Polarity :
PNP
Halogen Free :
Halogen Free
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Contact Plating :
Tin
Current Rating :
4A
Voltage - Rated DC :
-60V
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Element Configuration :
Single
Max Power Dissipation :
40W
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
2V
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Number of Terminations :
3
Transistor Application :
AMPLIFIER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2012
Emitter Base Voltage (VEBO) :
5V
Packaging :
Bulk
Transition Frequency :
25MHz
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-225AA, TO-126-3
Length :
6.35mm
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
60V
Factory Lead Time :
8 Weeks
Max Collector Current :
4A
Pin Count :
3
Number of Elements :
1
Datasheets
2N6035G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6035G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2N6035, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, 2N6035G pinout, 2N6035G datasheet PDF, 2N6035G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6035G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6035G


PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

2N6035G Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 25MHz.The maximum collector current is 4A volts.

2N6035G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz


2N6035G Applications


There are a lot of ON Semiconductor
2N6035G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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