2N6034G
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- Mfr.Part #
- 2N6034G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 40V 4A TO126
- Stock
- 23,233
- In Stock ：
- 23,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 7.74mm
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Voltage (VCEO) :
- 40V
- Continuous Collector Current :
- 4A
- Polarity :
- PNP
- Current Rating :
- 4A
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Published :
- 2006
- Voltage - Rated DC :
- -40V
- Max Power Dissipation :
- 40W
- Factory Lead Time :
- 2 Weeks
- Lead Free :
- Lead Free
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-225AA, TO-126-3
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transition Frequency :
- 25MHz
- Number of Terminations :
- 3
- Height :
- 11.04mm
- Width :
- 2.66mm
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Transistor Type :
- PNP - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.5W
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- 2N6034
- Datasheets
- 2N6034G
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6034G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 4A volts is possible.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor
2N6034G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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