2N6034
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- Mfr.Part #
- 2N6034
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 40V 4A TO126
- Stock
- 28,360
- In Stock ：
- 28,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 4A
- Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- 2N6034
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Current - Collector Cutoff (Max) :
- 100μA
- Factory Lead Time :
- 2 Weeks
- Current Rating :
- 4A
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -40V
- Length :
- 7.74mm
- Collector Emitter Saturation Voltage :
- 2V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 40W
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Transition Frequency :
- 25MHz
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Pins :
- 3
- Width :
- 2.66mm
- Radiation Hardening :
- No
- Published :
- 2006
- Polarity :
- PNP
- Max Collector Current :
- 4A
- Transistor Type :
- PNP - Darlington
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Height :
- 11.04mm
- ECCN Code :
- EAR99
- Datasheets
- 2N6034
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6034G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 4A volts is possible.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor
2N6034G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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