2N5886G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

2mA

Weight :

4.535924g

Collector Emitter Breakdown Voltage :

80V

Package / Case :

TO-204AA, TO-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Voltage - Rated DC :

80V

Published :

2005

Max Collector Current :

25A

Collector Emitter Saturation Voltage :

1V

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Number of Terminations :

2

Power Dissipation :

200W

Collector Base Voltage (VCBO) :

80V

Width :

26.67mm

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

4V @ 6.25A, 25A

Height :

8.51mm

Factory Lead Time :

13 Weeks

Base Part Number :

2N5886

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Current Rating :

25A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10A 4V

Surface Mount :

No

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Gain Bandwidth Product :

4MHz

Element Configuration :

Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Frequency :

4MHz

hFE Min :

20

Transistor Type :

NPN

Transistor Element Material :

SILICON

Terminal Form :

PIN/PEG

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

80V

Packaging :

Tray

Max Power Dissipation :

200W

Length :

39.37mm

Radiation Hardening :

No

Operating Temperature :

-65°C~200°C TJ

Transition Frequency :

4MHz

Contact Plating :

Tin

Pin Count :

2

Number of Pins :

2