2N5885G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

8.51mm

Vce Saturation (Max) @ Ib, Ic :

4V @ 6.25A, 25A

Base Part Number :

2N5885

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10A 4V

Transition Frequency :

4MHz

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

2mA

Transistor Element Material :

SILICON

Package / Case :

TO-204AA, TO-3

Operating Temperature :

-65°C~200°C TJ

Packaging :

Tray

REACH SVHC :

No SVHC

Terminal Form :

PIN/PEG

Polarity/Channel Type :

NPN

Contact Plating :

Tin

Number of Terminations :

2

Lead Free :

Lead Free

Weight :

4.535924g

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

60V

Number of Pins :

2

Terminal Position :

BOTTOM

Power Dissipation :

200W

Case Connection :

COLLECTOR

Pin Count :

2

Transistor Application :

SWITCHING

Gain Bandwidth Product :

4MHz

Collector Emitter Saturation Voltage :

1V

Max Power Dissipation :

200W

Length :

39.37mm

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

1

Max Collector Current :

25A

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

Frequency :

4MHz

Factory Lead Time :

2 Weeks

RoHS Status :

ROHS3 Compliant

Current Rating :

600mA

Pbfree Code :

yes

Published :

2005

hFE Min :

20

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

26.67mm

Element Configuration :

Single

Collector Base Voltage (VCBO) :

60V

ECCN Code :

EAR99

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

60V