2N4403TF
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- Mfr.Part #
- 2N4403TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92-3
- Stock
- 2,014
- In Stock ：
- 2,014
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Max Collector Current :
- 600mA
- Base Part Number :
- 2N4403
- Current Rating :
- -600mA
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Height :
- 5.33mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Terminal Position :
- BOTTOM
- Turn Off Time-Max (toff) :
- 255ns
- Transistor Application :
- SWITCHING
- Length :
- 5.2mm
- Number of Elements :
- 1
- Mount :
- Through Hole
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 625mW
- Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- hFE Min :
- 100
- Width :
- 4.19mm
- Collector Base Voltage (VCBO) :
- -40V
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 750mV
- Collector Emitter Breakdown Voltage :
- 40V
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2007
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Datasheets
- 2N4403TF
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N4403TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
2N4403TF Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TF Applications
There are a lot of ON Semiconductor
2N4403TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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