2N4403G
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- Mfr.Part #
- 2N4403G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92
- Stock
- 71,732
- In Stock ：
- 71,732
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- 2N4403
- Collector Emitter Saturation Voltage :
- 750mV
- Type :
- GENERAL PURPOSE
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Voltage - Rated DC :
- -40V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Published :
- 2007
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 255ns
- ECCN Code :
- EAR99
- Transition Frequency :
- 200MHz
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Current Rating :
- -600mA
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 30
- Power Dissipation :
- 625mW
- Datasheets
- 2N4403G
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4403G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N4403G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403G Applications
There are a lot of ON Semiconductor
2N4403G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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