2N4401TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

750mV

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Gain Bandwidth Product :

250MHz

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

240mg

Frequency :

250MHz

Contact Plating :

Tin

Max Power Dissipation :

625mW

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Lead Free :

Lead Free

Element Configuration :

Single

Mount :

Through Hole

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

40V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Terminal Position :

BOTTOM

Number of Elements :

1

Current Rating :

600mA

Base Part Number :

2N4401

Number of Terminations :

3

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

60V

Max Breakdown Voltage :

40V

Length :

6.35mm

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

40V

hFE Min :

100

Number of Pins :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Voltage - Rated DC :

40V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Height :

6.35mm

Max Collector Current :

600mA

Mounting Type :

Through Hole

Power Dissipation :

625mW

Published :

2007

Width :

6.35mm

Turn Off Time-Max (toff) :

255ns