2N4401TAR
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- Mfr.Part #
- 2N4401TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 201,302
- In Stock ：
- 201,302
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 40V
- Gain Bandwidth Product :
- 250MHz
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 5.33mm
- Factory Lead Time :
- 23 Weeks
- Lead Free :
- Lead Free
- Current Rating :
- 600mA
- JESD-609 Code :
- e3
- Width :
- 4.19mm
- Max Breakdown Voltage :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Transistor Type :
- NPN
- Length :
- 5.2mm
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 240mg
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Through Hole
- Max Collector Current :
- 600mA
- Frequency :
- 250MHz
- Collector Emitter Saturation Voltage :
- 750mV
- Terminal Finish :
- Tin (Sn)
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2N4401
- Datasheets
- 2N4401TAR
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401TAR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
2N4401TAR Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401TAR Applications
There are a lot of ON Semiconductor
2N4401TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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