2N4401RLRM
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- Mfr.Part #
- 2N4401RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 35,631
- In Stock ：
- 35,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- HTS Code :
- 8541.21.00.75
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- 2N4401
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 40V
- Turn Off Time-Max (toff) :
- 255ns
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Max Collector Current :
- 600mA
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 750mV
- Gain Bandwidth Product :
- 250MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 250MHz
- Lead Free :
- Contains Lead
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- hFE Min :
- 20
- Peak Reflow Temperature (Cel) :
- 240
- Collector Emitter Voltage (VCEO) :
- 750mV
- Turn On Time-Max (ton) :
- 35ns
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Current Rating :
- 600mA
- JESD-30 Code :
- O-PBCY-T3
- Datasheets
- 2N4401RLRM
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401RLRM Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N4401RLRM Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401RLRM Applications
There are a lot of ON Semiconductor
2N4401RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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