2N4401BU
- Mfr.Part #
- 2N4401BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 6,730
- In Stock :
- 6,730
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Factory Lead Time :
- 14 Weeks
- Current Rating :
- 600mA
- Collector Emitter Saturation Voltage :
- 750mV
- Collector Emitter Voltage (VCEO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Width :
- 4.19mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Max Collector Current :
- 600mA
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2N4401
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 40V
- Turn Off Time-Max (toff) :
- 255ns
- REACH SVHC :
- No SVHC
- Weight :
- 179mg
- Transistor Type :
- NPN
- Length :
- 5.2mm
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 60V
- Height :
- 5.33mm
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Rated DC :
- 40V
- Frequency :
- 250MHz
- Transition Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 250MHz
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 625mW
- Datasheets
- 2N4401BU
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NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Description
Because the 2N4401BU is an NPN transistor when the base pin is held at the ground, the collector and emitter are left open (reverse biased), and when a signal is applied to the base pin, they are closed (forward-biased). The gain value hfe of 2N4401BU is 500, which determines the transistor's amplification capacity. Because the Collector pin can only carry 800 milliamperes of current, we can't use this transistor to connect loads that draw more than 500 milliamperes. We must feed current to the base pin of a transistor to bias it, and this current (IB) should be limited to 5mA.
Features
? Continuous Collector current (IC) is 500mA
? Collector-Emitter voltage (VCE) is 40 V
? Collector-Base voltage (VCB) is 60V
? Emitter Base Breakdown Voltage (VBE) is 6V
? Halogen Free Available Upon Request By Adding Suffix "-HF"
? Epoxy Meets UL 94 V-0 Flammability Rating
? Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)
? Pb?Free Packages are Available*
? Operating Junction Temperature Range: -55℃ to +150℃
? Storage Temperature Range: -55℃ to +150℃
? Thermal Resistance: 200℃/W Junction to Ambient
? General purpose NPN Transistor
? High DC Current Gain (hFE), typically 80 when IC=10mA
? Transition Frequency is 100MHz
? Available in To-92 Package
Applications
? Speed control of Motors
? Inverter and other rectifier circuits
? Can be used in Darlington Pair
? Can be used to switch high current (up to 500mA) loads
? Be used in the various switching applications
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