2N3819

Manufacturer :

Central Semiconductor

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

360mW

FET Technology :

JUNCTION

RoHS Status :

Non-RoHS Compliant

Element Configuration :

Single

JESD-30 Code :

O-PBCY-T3

Drain to Source Voltage (Vdss) :

25V

Pbfree Code :

No

Transistor Type :

N-Channel JFET

Reach Compliance Code :

not_compliant

Terminal Form :

THROUGH-HOLE

Weight :

453.59237mg

HTS Code :

8541.21.00.95

Number of Terminations :

3

Operating Temperature (Max) :

150°C

Pin Count :

3

Surface Mount :

No

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Packaging :

Bulk

Feedback Cap-Max (Crss) :

4 pF

JESD-609 Code :

e0

Power Dissipation :

360mW

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

Number of Elements :

1

ECCN Code :

EAR99

Operating Mode :

Depletion Mode

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

20mA

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.02A

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)