1214-55

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Highest Frequency Band :

L B

Max Power Dissipation :

175W

Package / Case :

55AW

Power - Max :

175W

Terminal Form :

Flat

Frequency - Transition :

1.2GHz~1.4GHz

Pbfree Code :

No

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

High Reliability

Configuration :

Single

ECCN Code :

EAR99

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Mount :

Chassis Mount, Screw

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Gain :

7dB

Factory Lead Time :

12 Weeks

Operating Temperature :

200°C TJ

Max Collector Current :

8A

Transistor Type :

NPN

Qualification Status :

Not Qualified

Number of Terminations :

2

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Packaging :

Bulk

Published :

1996

JESD-30 Code :

R-CDFM-F2

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Number of Pins :

55

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pin Count :

2