ZXTP2006E6TA

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Mfr.Part #
ZXTP2006E6TA
Manufacturer
Diodes Incorporated
Package / Case
SOT-23-6
Datasheet
Download
Description
TRANS PNP 20V 3.5A SOT23-6
Stock
5,499
In Stock :
5,499

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
SOT-23-6
Frequency :
110MHz
hFE Min :
300
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
7.5V
Current - Collector Cutoff (Max) :
100nA
REACH SVHC :
No SVHC
Power - Max :
1.1W
Polarity/Channel Type :
PNP
Continuous Collector Current :
-3.5A
Power Dissipation :
1.7W
Max Breakdown Voltage :
20V
Transition Frequency :
110MHz
Number of Pins :
6
Max Power Dissipation :
1.1W
Collector Emitter Voltage (VCEO) :
20V
Current Rating :
-3.5A
Terminal Finish :
Matte Tin (Sn)
Voltage - Rated DC :
-20V
Factory Lead Time :
15 Weeks
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
25V
Mount :
Surface Mount
Lead Free :
Lead Free
Base Part Number :
ZXTP2006
Mounting Type :
Surface Mount
Length :
3.1mm
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 1A 2V
Collector Emitter Saturation Voltage :
-110mV
Terminal Position :
Dual
Terminal Form :
Gull wing
Collector Emitter Breakdown Voltage :
20V
Width :
1.8mm
Height :
1.3mm
Max Collector Current :
3.5A
Transistor Type :
PNP
Packaging :
Tape and Reel (TR)
Weight :
14.996898mg
Vce Saturation (Max) @ Ib, Ic :
130mV @ 350mA, 3.5A
ECCN Code :
EAR99
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Published :
2006
Radiation Hardening :
No
Gain Bandwidth Product :
110MHz
Pin Count :
6
Number of Terminations :
6
Transistor Element Material :
SILICON
Datasheets
ZXTP2006E6TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2006E6TA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-23-6, Number of Pins:6, Base Part Number:ZXTP2006, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, ZXTP2006E6TA pinout, ZXTP2006E6TA datasheet PDF, ZXTP2006E6TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2006E6TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP2006E6TA


PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount

ZXTP2006E6TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -110mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 130mV @ 350mA, 3.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -3.5A in order to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.The current rating of this fuse is -3.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 3.5A volts at Single BJT transistors maximum.

ZXTP2006E6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 110MHz


ZXTP2006E6TA Applications


There are a lot of Diodes Incorporated
ZXTP2006E6TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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