ZXMN4A06GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Terminal Position :

Dual

Turn On Delay Time :

2.55 ns

FET Type :

N-Channel

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Weight :

7.994566mg

Lead Free :

Lead Free

Turn-Off Delay Time :

28.61 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Length :

6.7mm

Threshold Voltage :

1V

Number of Pins :

4

Package / Case :

TO-261-4, TO-261AA

Voltage - Rated DC :

40V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

5A

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

18.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 40V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Current Rating :

6.7A

Power Dissipation-Max :

2W Ta

Pulsed Drain Current-Max (IDM) :

22A

ECCN Code :

EAR99

Rise Time :

4.45ns

Resistance :

75mOhm

Fall Time (Typ) :

7.35 ns

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Number of Channels :

1

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

7A

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

3.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Height :

1.8mm

Mount :

Surface Mount

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.5A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2002

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)