ZXMN3A02N8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

9A

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.025Ohm

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

25m Ω @ 12A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

26.8nC @ 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW THRESHOLD

Power Dissipation-Max :

1.56W Ta

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Pin Count :

8

Terminal Form :

Gull wing

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount