ZXMN20B28KTC
- Mfr.Part #
- ZXMN20B28KTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 1.5A TO252-3
- Stock
- 44,536
- In Stock :
- 44,536
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 3.949996g
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 358pF @ 25V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.1nC @ 5V
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 2.75A, 10V
- Turn On Delay Time :
- 17.8 ns
- Rise Time :
- 76.9ns
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 2.2W Ta
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Pbfree Code :
- No
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 44.7 ns
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 57.1 ns
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Height :
- 2.39mm
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 200V
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Transistor Element Material :
- SILICON
- Length :
- 6.73mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.78Ohm
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 17 Weeks
- Packaging :
- Cut Tape (CT)
- Published :
- 2003
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current (ID) :
- 2.3A
- Datasheets
- ZXMN20B28KTC

N-Channel Cut Tape (CT) 750m Ω @ 2.75A, 10V ±20V 358pF @ 25V 8.1nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN20B28KTC Description
ZXMN20B28KTC is a 200v N-channel enhancement MOSFET. This MOSFET features low on-resistance, fast switching, and a high avalanche withstand capability, making it ideal for high-efficiency power management applications, such as SLIC line drivers for VoIP applications, Transformer driving switch, Power management functions, Motor control, and Uninterrupted power supply applications.
ZXMN20B28KTC Features
100% Unclamped Inductive Switch (UIS) test in production
High avalanche energy pulse withstand capability
Low gate drive voltage (Logic level capable)
Low input capacitance
Low on-resistance
Fast switching speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ZXMN20B28KTC Applications
SLIC line drivers for VoIP applications
Transformer driving switch
Power management functions
Motor control
Uninterrupted power supply
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