ZVN4306GVTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

60V

FET Type :

N-Channel

Radiation Hardening :

No

Width :

3.7mm

Vgs (Max) :

±20V

Fall Time (Typ) :

16 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Terminal Position :

Dual

Height :

1.65mm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

4

Pbfree Code :

No

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Package / Case :

TO-261-4, TO-261AA

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Length :

6.7mm

Current Rating :

2.1A

Power Dissipation :

3W

Number of Channels :

1

Rise Time :

25ns

Mounting Type :

Surface Mount

Resistance :

330mOhm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation-Max :

3W Ta

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Turn-Off Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8 ns

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Continuous Drain Current (ID) :

2.1A

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Mount :

Surface Mount

Weight :

7.994566mg

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

17 Weeks