ZVN0124A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.77mm

Width :

2.41mm

Pin Count :

3

Weight :

453.59237mg

Published :

2006

Feedback Cap-Max (Crss) :

7 pF

Number of Channels :

1

Number of Pins :

3

Mount :

Through Hole

Factory Lead Time :

17 Weeks

Terminal Form :

Wire

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Voltage - Rated DC :

240V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

16 ns

Number of Terminations :

3

JESD-609 Code :

e3

Turn On Delay Time :

7 ns

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

700mW Ta

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

160mA

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

16 Ω @ 250mA, 10V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Vgs(th) (Max) @ Id :

3V @ 1mA

Height :

4.01mm

Drain to Source Breakdown Voltage :

240V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

160mA

Transistor Element Material :

SILICON

Packaging :

Bulk

ECCN Code :

EAR99

Power Dissipation :

700mW

Rise Time :

8ns