UMH8NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

Additional Feature :

Digital

Collector Emitter Saturation Voltage :

300mV

Factory Lead Time :

10 Weeks

Published :

2007

Max Power Dissipation :

150mW

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Number of Pins :

6

Terminal Form :

Gull wing

VCEsat-Max :

0.3 V

Terminal Finish :

TIN COPPER

Transition Frequency :

250MHz

Width :

1.35mm

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mount :

Surface Mount

hFE Min :

100

Voltage - Rated DC :

50V

Radiation Hardening :

No

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.1mm

Number of Terminations :

6

Lead Free :

Lead Free

Height :

900μm

Package / Case :

SC

Packaging :

Tape and Reel (TR)

DC Current Gain-Min (hFE) :

100

Max Operating Temperature :

150°C

Emitter Base Voltage (VEBO) :

5V

HTS Code :

8541.21.00.75

Current Rating :

100mA

Transistor Application :

SWITCHING

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

100mA

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2